deep-level defects

См. также в других словарях:

• Deep-level trap — Deep level traps or deep level defects are a generally undesirable type of electronic defect in semiconductors. They are deep in the sense that the energy required to remove an electron or hole from the trap to the valence or conduction band is… …   Wikipedia

• Deep-level transient spectroscopy — (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are …   Wikipedia

• Crystallographic defects in diamond — Synthetic diamonds of various colors grown by the high pressure high temperature technique, the diamond size is 2 mm …   Wikipedia

• Star Trek: Deep Space Nine — intertitle Format Military science fiction Created by Rick Berman Michael Piller …   Wikipedia

• Drive Level Capacitance Profiling — (DLCP) is a type of capacitance voltage profiling characterization technique developed specifically for amorphous and polycrystalline materials which have more anomalies such as deep levels, interface states, or nonuniformities. Whereas in… …   Wikipedia

• Radiation hardening — is a method of designing and testing electronic components and systems to make them resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high energy electromagnetic radiation),[1] such as would be encountered… …   Wikipedia

• diagnosis — /duy euhg noh sis/, n., pl. diagnoses / seez/. 1. Med. a. the process of determining by examination the nature and circumstances of a diseased condition. b. the decision reached from such an examination. Abbr.: Dx 2. Biol. scientific… …   Universalium

• Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… …   Wikipedia

• Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… …   Wikipedia

• Crystallographic defect — Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials… …   Wikipedia

• Thermally stimulated current — (TSC) spectroscopy is an important technique used to study energy levels in semiconductors or insulators (organic or inorganic). Energy levels are first filled either by optical or electrical injection usually at a relatively low temperature,… …   Wikipedia